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A. Gangnaik et al.
Journal of Vacuum Science and Technology B
July 2015
Study of topographical and structural changes occurring in a positive resist known as SML after electron beam lithography are presented in this article. The authors also defined its chemical structure, which is very important for understanding the lithographic performance of the resist. The structural and lithographic properties of SML have been compared to the traditional ZEP resist.Read more...
F. Liu, Y. Yao, J.A. van Kan
Nulcear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
April 2015
Nanoimprint lithography (NIL) is a promising technology that can fabricate structures with high resolution and high throughput. To replicate patterns through NIL, a high quality master mold is needed. A UV patternable inorganic–organic hybrid polymer, OrmoStamp with high resolution is promising for the fabrication of NIL molds. Here, OrmoStamp molds were fabricated by proton beam writing (PBW) in resist followed by OrmoStamp casting. In this paper, different resists (HSQ, PMMA, SU-8 and SML) were evaluated by PBW for OrmoStamp mold fabrication.Read more...
A. Gangnaik et al.
Microelectronic Engineering
May 2013
We present study on a novel, positive-tone electron beam lithography (EBL) resist known as SML and compare its lithographic performance to well-established positive resists such as 950 K polymethyl methacrylate (PMMA) and ZEP 520A. SML has been fabricated to have processing parameters similar to PMMA, but with enhanced functionality. Processing parameters such as film deposition, baking temperatures as well as the developers used for PMMA work well with SML resist. Read more...
M. Mohammad et al.
Nanoscale Research Letters
March 2013
A detailed process characterization of SML electron beam resist for high-aspect-ratio nanopatterning at high sensitivity is presented. Read more...
S. Lewis and Lucio Piccirillo
Advances in Diverse Industrial Applications of Nanocomposites - Chapter 20
March 2011
The trend of Moore’s law has been maintained using the current technology of the ultra large scale integration which produces circuits of sub 100 nm (Gonsalves et al., 2001). This has been made possible by sub 100nm lithography, by the design of next generation resists operating at extreme ultra violet wavelengths. Read more...
S. Lewis et al.
NSTI - Nanotech 2010 - Conference Proceedings
2010
An electron beam resist called SML2000 has been investigated. It has produced nano-structures with a high aspect ratio of 10:1 using an acceleration voltage of 25 kV. This is significant, as comparing this result with PMMA, it was found from the Monte Carlo simulatons that PMMA had inherent problems of generating secondary electrons which contribute to the proximity effect. It was clear that the SML2000 did not suffer with these problems as 200nm structures remained after the development process. Read more...
S. Lewis et al.
Thin Solid Films
2010
Poly(methylmethacrylate) (PMMA) based nanocomposite electron beam resists have been demonstrated by spin coating techniques. When TiO2 and Al2O3 nanoparticles were directly dispersed into the PMMA polymer matrix, the resulting nanocomposites produced poor quality films with surface roughnesses of 322 and 402 nm respectively. To improve the surface of the resists, the oxide nanoparticles were encapsulated in toluene and methanol. Read more...