SML Resist Technology

SML Resist Technology

The high performance SML resist is a novel polymer that has been specifically designed to answer the demands of the EBL community. It can be simultaneously patterned into high resolution and high aspect ratio patterns, even at low acceleration voltages and without the aid of proximity effect correction.

SML resist has been specifically designed to fit in with a standard PMMA process. No change in chemistry or process traning is required.

Specifications

  • Very high resolution: < 10nm
  • Very high aspect ratio:
    • > 10:1 @ 30 kV
    • >50:1 @ 100 kV
  • Thickness: 50 nm - 2000 nm
  • Superior LER/LWR
  • Very straight sidewalls
  • Excellent surface adhesion (HMDS not required)
  • Excellent etch resistance

Exposure / Contrast

Voltage (kV) SML50 SML100 SML300
D0(µC/cm2) Contrast D0(µC/cm2) Contrast D0(µC/cm2) Contrast
10 63 9.2 72 7.0 102 10.4
15 84 9.0 108 9.0 143 9.8
20 103 9.0 129 10.4 194 8.2
25 111 8.8 156 8.9 218 7.0
50 398 8.6 378 6.7 480 7.9
Spin curves SML50 SML100

Spin curves for SML50 (bottom) and SML100 (top).

Spin curves SML300 SML600

Spin curves for SML300 (bottom) and SML600 (top).

Spin curves SML1000 SML2000

Spin curves for SML1000 (bottom) and SML2000 (top).

Example Exposures

SML300

SML50
Resist Thickness 300 nm
Acceleration Voltage 30 kV
Structure 25 nm lines / 200 nm pitch
Aspect Ratio 12:1

SML2000

SML2000
Resist Thickness 2000 nm
Acceleration Voltage 100 kV
Structure 30 nm lines / 100 nm pitch
Aspect Ratio 65:1

SML600 - Aluminium lift-off

SML600
Resist Thickness 600 nm
Metal Thickness 500 nm
Acceleration Voltage 25 kV
Structure 60 nm lines / 180 nm pitch
Aspect Ratio 8:1
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