H-SiOx (HSQ) – Negative Tone Electron Beam Resist
EM Resist provides HSQ resist in both liquid and powder form. A high resolution negative tone electron beam resist with excellent etch properties.
H-SiOx (HSQ) is a high purity, silsesquioxane-based semiconductor grade polymer applicable as a negative tone resist for electron beam patterns, EUV, nanoimprint lithography and Step and Flash Imprint Lithography (SFIL). It is readily soluble in non-polar organic solvents like methyl isobutylketone (MIBK), methyl siloxane and toluene for thin-film fabrication. Depending on the film thickness, a dense pattern with sub-10 nm half-pitch can be achieved.
HSQ provided by EM Resist will replace any current product you might already use, like-for-like. If you would like to discuss about moving over to EM Resist for your HSQ requirements, please get in touch.
Current lead times for both solution and kit form are 2 – 5 weeks.
HSQ resist is a high resolution negative tone resist that has excellent etch resistance. Lithography can be performed with E-beam, EUV or SFIL.
We offer HSQ pre-diluted and filtered in MIBK, however we also have the option of a ‘dry-kit’. This consists of HSQ powder in a vial, a measure of MIBK and a syringe and syringe filter. This enables the user to perform custom dilutions as well as extend the shelf-life of the resist.
- Direct write and thin uniform films
- High resolution (<10 nm features)
- Excellent line edge roughness
- Good dry etch resistance
- Available in powder form to meet every need
- Very long shelf life at 20°C (in powder form)