HSQ Resist

H-SiOx – Negative Tone Electron Beam Resist

SiOx is a high purity, silsesquioxane-based semiconductor grade polymer applicable as a negative tone resist for electron beam patterns, EUV, nanoimprint lithography and Step and Flash Imprint Lithography (SFIL). It is readily soluble in non-polar organic solvents like methyl isobutylketone (MIBK), methyl siloxane and toluene for thin-film fabrication. Depending on the film thickness, a dense pattern with sub-10 nm half-pitch can be achieved.

Quotation Request

HSQ resist is a high resolution negative tone resist that has excellent etch resistance. Lithography can be performed with E-beam, EUV or SFIL.

We offer HSQ pre-diluted and filtered in MIBK, however we also have the option of a ‘dry-kit’. This consists of HSQ powder in a vial, a measure of MIBK and a syringe and syringe filter. This enables the user to perform custom dilutions as well as extend the shelf-life of the resist.

Specifications

  • Direct write and thin uniform films
  • High resolution (<10 nm features)
  • Excellent line edge roughness
  • Good dry etch resistance
  • Available in powder form to meet every need
  • Very long shelf life at 20°C (in powder form)