EM Resist provides HSQ resist in both liquid and powder form. A high resolution negative tone electron beam resist with excellent etch properties.
H-SiOx (HSQ) is a high purity, silsesquioxane-based semiconductor grade polymer applicable as a negative tone resist for electron beam patterns, EUV, nanoimprint lithography and Step and Flash Imprint Lithography (SFIL). It is readily soluble in non-polar organic solvents like methyl isobutylketone (MIBK), methyl siloxane and toluene for thin-film fabrication. Depending on the film thickness, a dense pattern with sub-10 nm half-pitch can be achieved.
HSQ provided by EM Resist will replace any current product you might already use, like-for-like. If you would like to discuss about moving over to EM Resist for your HSQ requirements, please get in touch.
Both solution and powder kits can be shipped internationally.